| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device with a wide variable capacitive range, provided with an MOS type varactor element having a large capacity per unit area. SOLUTION: In a semiconductor integrated circuit device, an n-channel transistor 1, a p-channel transistor 2, and an MOS type varactor element 3 are provided on the surface of a p-type substrate PSub. A gate insulating film 14 of the MOS type varactor element 3 is made thinner than a gate insulating film 4 of the n-channel transistor 1 and the p-channel transistor 2. The maximum value of a gate voltage impressing between a well terminal Vb and a gate terminal Vg of the MOS type varactor element 3 is made lower than that of the gate voltage impressing to the n-channel transistor 1 and the p-channel transistor 2. COPYRIGHT: (C)2005,JPO&NCIPI
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