| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic random access memory (MRAM) in which the set value of writing current in a writing test mode is switched to a value smaller than and a value larger than those in normal use to realize evaluation of an erroneous margin or a writing margin resulting in the high reliability of the MRAM. SOLUTION: The MRAM in which magnetoresistive elements being memory elements are arrange two-dimensionally on a plane and a current magnetic field generated by a line-direction current and a current magnetic field generated by a column-direction current are used for selectively writing data in the magnetoresistive element is characterized in that there are a plurality of set values of writing current in each of the line and column directions in writing test mode. COPYRIGHT: (C)2005,JPO&NCIPI
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