发明名称 |
Method to reduce residual particulate contamination in CVD and PVD semiconductor wafer manufacturing |
摘要 |
A method of reducing particulate contamination in a deposition process including providing a semiconductor wafer having a process surface for depositing a deposition layer thereover according to one of a physical vapor deposition (PVD) and a chemical vapor deposition (CVD) process; depositing at least a portion of the deposition layer over the process surface; cleaning the semiconductor wafer including the process surface according to an ex-situ cleaning process to remove particulate contamination including at least one of spraying and scrubbing; and, repeating the steps of depositing and cleaning at least once to include reducing a level of occluded particulates.
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申请公布号 |
US6812156(B2) |
申请公布日期 |
2004.11.02 |
申请号 |
US20020188490 |
申请日期 |
2002.07.02 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
DAY DYSON;LI MEI-YEN;MORE MING-TE;CHU HSING-YUAN |
分类号 |
H01L21/306;H01L21/316;H01L21/318;H01L21/768;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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