发明名称 Method to reduce residual particulate contamination in CVD and PVD semiconductor wafer manufacturing
摘要 A method of reducing particulate contamination in a deposition process including providing a semiconductor wafer having a process surface for depositing a deposition layer thereover according to one of a physical vapor deposition (PVD) and a chemical vapor deposition (CVD) process; depositing at least a portion of the deposition layer over the process surface; cleaning the semiconductor wafer including the process surface according to an ex-situ cleaning process to remove particulate contamination including at least one of spraying and scrubbing; and, repeating the steps of depositing and cleaning at least once to include reducing a level of occluded particulates.
申请公布号 US6812156(B2) 申请公布日期 2004.11.02
申请号 US20020188490 申请日期 2002.07.02
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD 发明人 DAY DYSON;LI MEI-YEN;MORE MING-TE;CHU HSING-YUAN
分类号 H01L21/306;H01L21/316;H01L21/318;H01L21/768;(IPC1-7):H01L21/302 主分类号 H01L21/306
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