Method for fabricating memory cell structure employing contiguous gate and capacitor dielectric layer

摘要

A method for fabricating a memory cell structure provides for fabricating a capacitor within the memory cell structure within an asymmetric trench within an isolation region adjoining an active region such that a capacitor node layer within the capacitor contacts a sidewall of the active region and is electrically connected to a source/drain region within a field effect transistor device fabricated within the active region. The method also employs when fabricating the memory cell structure a contiguous dielectric layer as a gate dielectric layer within the field effect transistor device and a capacitor dielectric layer within the capacitor. The dynamic random access memory cell structure may be efficiently fabricated as an embedded dynamic random access memory cell structure.