| 摘要 |
A method of forming a floating gate of a memory cell is provided. A substrate having at least a trench is provided. Next, a tunnel oxide layer is formed on a surface of the trench. Next, a conductive layer is filled in the trench. Next, two-step etching process is carried out to form a first floating gate and a second floating gate having a top corner with sharp edge over the sidewalls of the trench.
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