发明名称 Method of determining charge loss activation energy of a memory array
摘要 A method of determining charge loss activation for a memory array. Memory arrays are programmed with a pattern for testing charge loss. Then, respective bake times are calculated for the memory arrays to experience a given amount of charge loss at their respective bake temperatures. Then, charge loss activation energy is calculated, based on the respective bake times. In one version, the memory arrays are cycled by repeatedly erasing and reprogramming them before baking. In another embodiment, various regions of the memory arrays are programmed to a plurality of distinct delta threshold voltages before baking.
申请公布号 US6813752(B1) 申请公布日期 2004.11.02
申请号 US20020306667 申请日期 2002.11.26
申请人 ADVANCED MICRO DEVICES, INC. 发明人 HSIA EDWARD;HAMILTON DARLENE G.;ZHENG WEI;RANDOLPH MARK W.;TANPAIROJ KULACHET
分类号 G11C29/50;(IPC1-7):G06F17/50;G01R31/26 主分类号 G11C29/50
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