| 摘要 |
PROBLEM TO BE SOLVED: To enable a thin film transistor substrate which is capable of reducing a leakage current and a deterioration in withstand voltage to be manufactured with high productivity using a polycrystallization process carried out by irradiation with a CW laser. SOLUTION: The thin film transistor substrate is equipped with a transparent insulating board, a first thin film transistor formed on the transparent insulating board, and a second thin film transistor which is formed on the transparent insulating board and different in characteristics from the first thin film transistor. The active layer of the first thin film transistor is 50 nm or above in thickness and 1μm or above in average crystal grain diameter, and the active layer of the second thin film transistor is 60 nm or below in thickness and below 1μm in average crystal grain diameter. COPYRIGHT: (C)2005,JPO&NCIPI
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