| 摘要 |
PROBLEM TO BE SOLVED: To prevent the conversion of a single crystal into a polycrystal in a seed crystal part by preventing falling of a seed crystal and outflow of a liquid encapsulating agent by preventing falling of a cap at the lower end opening part for accommodating the seed crystal of a growth vessel. SOLUTION: The method for growing a semiconductor single crystal comprises vertically installing a bottomed, cylindrical growth vessel 1 accommodating the seed crystal 2, a raw material 3 and the liquid encapsulating agent 4, then melting the raw material by heating it under a prescribed temperature distribution by heating elements 6, 7 of an electric furnace, which are arranged so as to surround the growth vessel 1, and growing the compound semiconductor single crystal toward the upward direction from the seed crystal 2. A stopper 10 or 20 for preventing falling of the cap 9 fitted in the lower end opening part (narrow diameter part 1a) for accommodating the seed crystal of the growth vessel 1 is provided below the cap 9 or between the cap 9 and the growth vessel 1. COPYRIGHT: (C)2005,JPO&NCIPI
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