THIN FILM TRANSISTOR SUBSTRATE AND ELECTRO-PHORETIC INDICATION DISPLAY

摘要

PURPOSE: A thin film transistor substrate and an electro-phoretic indication display are provided to secure an aperture ratio and display characteristic and minimize leakage current. CONSTITUTION: A gate line(121) including a gate electrode is formed on an insulating substrate. A gate insulating layer is formed on the gate electrode, and a semiconductor layer is formed on the gate insulating layer. A data line(171) including a source electrode(173) intersects the gate line. A drain electrode(175) is formed on the semiconductor layer. A passivation layer formed of an organic insulating material partially covers the semiconductor layer. A pixel electrode(191) is formed on the passivation layer. The pixel electrode is located in a pixel region surrounded by the gate line and the data line and connected to the drain electrode. The edge of the pixel electrode is superposed on the gate line or the data line.