| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting diode which can obtain a light emitting diode of high luminance at a low cost, and to provide a method for manufacturing the same. <P>SOLUTION: This light emitting diode includes a semiconductor substrate made of Ge, a plurality of epitaxial layers for constituting a light emitting part formed on the front surface side of the semiconductor substrate, a connecting part formed between the Ge semiconductor substrate and the epitaxial layers and having an area smaller than that of the epitaxial layer, a partial electrode formed on the front surface of the epitaxial layer, and a whole surface electrode formed on the rear surface of the Ge semiconductor substrate. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
