发明名称 |
Giant magnetoresistive sensor with high-resistivity doped underlayer and doped pinned layer |
摘要 |
A giant magnetoresistive stack for use in a magnetic read head has a plurality of layers including at least one ferromagnetic layer which contributes to a giant magnetoresistive signal, a doped ferromagnetic pinned layer and a doped ferromagnetic underlayer which do not contribute to a giant magnetoresistive signal. The dopant in the doped ferromagnetic pinned layer and underlayer reduces parasitic shunting current through the giant magnetoresistive stack by providing an increase in resistivity without a decrease in magnetization.
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申请公布号 |
US6809909(B2) |
申请公布日期 |
2004.10.26 |
申请号 |
US20020060519 |
申请日期 |
2002.01.30 |
申请人 |
SEAGATE TECHNOLOGY LLC |
发明人 |
HOU CHUNHONG;HEINONEN OLLE G.;KIEF MARK T. |
分类号 |
G11B5/31;G11B5/39;(IPC1-7):G11B5/127;G11B5/33 |
主分类号 |
G11B5/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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