发明名称 Giant magnetoresistive sensor with high-resistivity doped underlayer and doped pinned layer
摘要 A giant magnetoresistive stack for use in a magnetic read head has a plurality of layers including at least one ferromagnetic layer which contributes to a giant magnetoresistive signal, a doped ferromagnetic pinned layer and a doped ferromagnetic underlayer which do not contribute to a giant magnetoresistive signal. The dopant in the doped ferromagnetic pinned layer and underlayer reduces parasitic shunting current through the giant magnetoresistive stack by providing an increase in resistivity without a decrease in magnetization.
申请公布号 US6809909(B2) 申请公布日期 2004.10.26
申请号 US20020060519 申请日期 2002.01.30
申请人 SEAGATE TECHNOLOGY LLC 发明人 HOU CHUNHONG;HEINONEN OLLE G.;KIEF MARK T.
分类号 G11B5/31;G11B5/39;(IPC1-7):G11B5/127;G11B5/33 主分类号 G11B5/31
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