| 摘要 |
PROBLEM TO BE SOLVED: To enable high speed translocation of carriers in a direction perpendicular to a quantum well surface even when shut potential of a quantum well is deep and quantum well number is large, in an optical semiconductor device which has multiple quantum well structure in an active layer. SOLUTION: A type-II version quantum dot which has potential to shut only carrier (usually holes) of one out of electrons/holes is subjected to padding and growth in a barrier layer of a multiple quantum well. As a result, when biased of the whole multiple quantum well layer is carried out forward or backward, high speed translocation of carriers (usually holes) is enabled by tunnel effect, from energy level of one quantum well layer which is adjacent to the quantum dot to energy level of adjacency quantum well of the other side through energy level in the quantum dot. COPYRIGHT: (C)2005,JPO&NCIPI
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