| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that the outer peripheral side surface of a wafer supporting substrate and inner walls of through holes of the wafer supporting substrate made of sapphire which has been used in a conventional process of the rear-surface processing of a semiconductor wafer have been subjected to gradual reactions on an acid, when intending to etch by the acid gold stuck to the substrate in the process of the rear-surface processing of the semiconductor wafer as to utilize repeatedly the substrate. SOLUTION: In the semiconductor-wafer supporting substrate made of sapphire, the average roughnesses (Ra) of center lines of the inner walls of a plurality of through holes formed in the surface of the substrate and the average roughness (Ra) of the center line of the outer peripheral side surface of the substrate are made not larger than 0.3μm, to obtain a mirror finish. COPYRIGHT: (C)2005,JPO&NCIPI |
