| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the reliability of embedded wiring including a main conductor film containing copper as the main component. <P>SOLUTION: After an insulating film 21 composed of a silicon carbide/nitride film having an excellent copper barrier property is formed on an insulating film 16 containing the top surface of wiring 20 formed as lower-layer wiring, an insulating film 22 composed of a silicon carbide film having an excellent adhesive property to a film composed of a material having a low dielectric constant is formed on the insulating film 21, and another insulating film 23 composed of a material having a low dielectric constant is formed on the insulating film 22 as an interlayer insulating film. Then wiring 34 is formed on the insulating film 23 as upper-layer wiring. The laminated film of the insulating films 21 and 22 is used as the barrier insulating film of copper wiring. In addition, the lower insulating film 21 is formed to have a high barrier property, and the upper insulating film 22 is formed to have a high adhesive property. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
