Verfahren zur Herstellung eines Halbleiterelements mit einer Platinschicht,申请号DE19961013669-传众专利搜索

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发明名称	Verfahren zur Herstellung eines Halbleiterelements mit einer Platinschicht
摘要
申请公布号	DE19613669(B4)	申请公布日期	2004.10.21
申请号	DE19961013669	申请日期	1996.04.04
申请人	HYUNDAI ELECTRONICS INDUSTRIES CO., LTD.	发明人	LEE, WON JAE;LEE, SEAUNG SUK
分类号	C23C14/08;C23C14/34;C23C14/58;H01L21/02;H01L21/31;H01L21/316;H01L21/321;H01L21/822;H01L21/8242;H01L27/04;H01L27/10;H01L27/108;(IPC1-7):H01L21/320	主分类号	C23C14/08
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