发明名称 Nonvolatile memory with error correction for page copy operation and method thereof
摘要 The disclosure is a NAND flash memory with the function of error checking and correction during a page copy operation. The NAND flash memory is able to prohibit transcription of erroneous bits to a duplicate page from a source page. Embodiments of the inventive flash memory include a correction circuit for correcting bit errors of source data stored in a page buffer, a circuit configured to provide the source data to the correction circuit and to provide correction data to the page buffer, and a copy circuit configured to copy the source data to the page buffer, and to store the correction data in the other page from the page buffer.
申请公布号 US2004202034(A1) 申请公布日期 2004.10.14
申请号 US20040817061 申请日期 2004.04.02
申请人 LEE JIN-YUB 发明人 LEE JIN-YUB
分类号 G06F12/16;G06F12/06;G11C16/02;G11C16/04;G11C16/06;G11C16/10;G11C16/26;G11C29/42;(IPC1-7):G11C11/34 主分类号 G06F12/16
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