发明名称 Metal wiring method for an undercut
摘要 A metal wiring method for an undercut in a MEMS packaging process includes disposing a MEMS element on a silicon substrate, welding a glass wafer to an upper portion of the silicon substrate having the MEMS element disposed thereon, the glass wafer having a hole formed therein for connecting a metal wiring, depositing a thin metal film for the metal wiring in the hole, and ion-mealing the deposited thin metal film. By the ion-mealing, the method is capable of connecting a metal wiring to a via hole having an undercut.
申请公布号 US2004203186(A1) 申请公布日期 2004.10.14
申请号 US20030686769 申请日期 2003.10.17
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SHONG CI-MOO;KANG SEOK-JIN;CHUNG SEOK-WHAN;LEE MOON-CHUL;JUNG KYU-DONG;KIM JONG-SEOK;JUN CHAN-BONG;HONG SEOG-WOO;KANG JUNG-HO
分类号 B81C1/00;B81B7/00;H01L21/768;H01L23/522;(IPC1-7):H01L21/44 主分类号 B81C1/00
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