发明名称 |
Metal wiring method for an undercut |
摘要 |
A metal wiring method for an undercut in a MEMS packaging process includes disposing a MEMS element on a silicon substrate, welding a glass wafer to an upper portion of the silicon substrate having the MEMS element disposed thereon, the glass wafer having a hole formed therein for connecting a metal wiring, depositing a thin metal film for the metal wiring in the hole, and ion-mealing the deposited thin metal film. By the ion-mealing, the method is capable of connecting a metal wiring to a via hole having an undercut.
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申请公布号 |
US2004203186(A1) |
申请公布日期 |
2004.10.14 |
申请号 |
US20030686769 |
申请日期 |
2003.10.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHONG CI-MOO;KANG SEOK-JIN;CHUNG SEOK-WHAN;LEE MOON-CHUL;JUNG KYU-DONG;KIM JONG-SEOK;JUN CHAN-BONG;HONG SEOG-WOO;KANG JUNG-HO |
分类号 |
B81C1/00;B81B7/00;H01L21/768;H01L23/522;(IPC1-7):H01L21/44 |
主分类号 |
B81C1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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