| 摘要 |
PURPOSE: A high voltage transistor is provided to prevent generation of spark by forming an impurity region with a different material from a channel stopper on an outer surface of a channel stopper. CONSTITUTION: A second conductive type base region(20,30) and a field limiting ring(40) are formed on a first conductive type collector region(10). A first conductive type channel stopper(60) is formed on the first conductive type collector region. A first conductive type emitter region(50) is formed on the second conductive type base region. An emitter electrode(80), an EQR electrode(90), and a base electrode are formed on the base region. A passivation layer is formed thereon. A second conductive type edge impurity region and a lightly-doped region are simultaneously formed on an edge of an outer surface of the channel stopper.
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