发明名称 |
PHOTOSENSITIVE POLYIMIDE PRECURSOR, PHOTOSENSITIVE POLYIMIDE RESIN COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT USING THE RESIN COMPOSITION |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photosensitive polyimide precursor which can form a polyimide film having reduced thermal expansiveness and residual stress, excellent adhesion to a base, increased breaking strength and elongation at break, furthermore reduces the warpage caused in a silicon wafer when the film is formed on the silicon wafer, and a photosensitive polyimide resin composition. <P>SOLUTION: The photosensitive polyimide precursor has a repeating unit formed of a polycondensation product of a tetracarboxylic acid or its acid anhydride and a diamine in the main chain and actinic radiation sensitive groups at its both terminals. The tetracarboxylic acid or its acid anhydride contains 70-100 mol% aromatic tetracarboxylic acid or its acid anhydride having a rigid structure and the diamine contains 70-100 mol% aromatic diamine having a rigid structure. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2004285129(A) |
申请公布日期 |
2004.10.14 |
申请号 |
JP20030076645 |
申请日期 |
2003.03.19 |
申请人 |
NIPPON ZEON CO LTD;FUJITSU LTD |
发明人 |
TANAKA AKIRA;ISHIZUKI YOSHIKATSU |
分类号 |
G03F7/004;C08G73/10;G03F7/027;G03F7/038;G03F7/40;H01L23/29;H01L23/31 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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