发明名称 |
Self-aligned contact for silicon-on-insulator devices |
摘要 |
A method for forming a self-aligned contact to an ultra-thin body transistor first providing an ultra-thin body transistor with source and drain regions operated by a gate stack; forming a contact spacer on the gate stack; forming a passivation layer overlying the transistor; forming a contact hole in the passivation layer exposing the contact spacer and the source/drain regions; filling the contact hole with an electrically conductive material; and establishing electrical communication with the source/drain region. |
申请公布号 |
US2004203211(A1) |
申请公布日期 |
2004.10.14 |
申请号 |
US20030409810 |
申请日期 |
2003.04.08 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
YANG FU-LIANG;YEO YEE-CHIA;TSENG HORNG-HUEI;HU CHENMING |
分类号 |
H01L21/336;H01L21/60;H01L29/786;(IPC1-7):H01L21/336;H01L21/44;H01L21/320;H01L21/476;H01L29/76 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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