| 摘要 |
PURPOSE: A high voltage generation circuit for a semiconductor device is provided to prevent unnecessary power consumption by blocking the operation of a main pump when the active kicker and the main charge pump are operated at the same time. CONSTITUTION: A high voltage generation circuit for a semiconductor device includes a first high voltage generation unit(2,6,8), a second high voltage generation unit(4,12,10) and a simultaneous operation blocking unit(20). The first high voltage generation unit(2,6,8) generates a high voltage having a predetermined level in response to the active control signal. The second high voltage generation unit(4,12,10) connects its level detection terminal to the high voltage output terminal of the first high voltage generation unit(2,6,8). The second high voltage generation unit(4,12,10) generates the high voltage having the predetermined level without responding to the active control signal. And, the simultaneous operation blocking unit(20) applies the prohibition control signal for blocking the operation of the second high voltage generation unit(4,12,10) to the second high voltage generation unit(4,12,10) during a predetermined time after the active control signal is activated.
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