发明名称 |
METHOD FOR MANUFACTURING CAPACITOR FOR IMPROVING FATIGUE OF FERROELECTRIC FILM |
摘要 |
PURPOSE: A method for manufacturing a capacitor is provided to improve fatigue phenomenon by implanting oxygen or ozone ions into a conductive layer on a lower electrode using plasma treatment having low energy. CONSTITUTION: A base lower electrode composed of Ir(203) and IrO2(205) is formed on a substrate(201) with a desired structure. A conductive layer(207) is formed on the base lower electrode, thereby forming a lower electrode. The surface of the conductive layer is reformed by implanting oxygen or ozone ions(208) using plasma treatment having low energy of 0.5-1.0 KeV. Then, a ferroelectric film(209) is formed on the resultant structure. An upper electrode composed of IrO2(211) and Ir(213) is formed on the ferroelectric film. The resultant structure is annealed.
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申请公布号 |
KR20040087197(A) |
申请公布日期 |
2004.10.13 |
申请号 |
KR20030021469 |
申请日期 |
2003.04.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HUH, JANG EUN;JU, SEOK HO |
分类号 |
H01L27/105;(IPC1-7):H01L27/105 |
主分类号 |
H01L27/105 |
代理机构 |
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主权项 |
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地址 |
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