发明名称 |
Read-modify-write memory using read-or-write banks |
摘要 |
Minimal memory access times are realized by using a single access to a read-modify-write bank. A read-modify-write memory including at least one read-or-write bank is operated in a manner that uses at most one access to each of the at least one read-or-write banks for each read-modify-write access to the memory during a memory cycle. The access can be effected during a single clock cycle and can be used for read, write and read-modify-write memory access.
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申请公布号 |
US6804162(B1) |
申请公布日期 |
2004.10.12 |
申请号 |
US20020117501 |
申请日期 |
2002.04.05 |
申请人 |
T-RAM, INC. |
发明人 |
ELDRIDGE MATTHEW;IGEHY ROBERT HOMAN |
分类号 |
G06F12/08;G11C7/10;G11C8/12;(IPC1-7):G11C8/00 |
主分类号 |
G06F12/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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