发明名称 Read-modify-write memory using read-or-write banks
摘要 Minimal memory access times are realized by using a single access to a read-modify-write bank. A read-modify-write memory including at least one read-or-write bank is operated in a manner that uses at most one access to each of the at least one read-or-write banks for each read-modify-write access to the memory during a memory cycle. The access can be effected during a single clock cycle and can be used for read, write and read-modify-write memory access.
申请公布号 US6804162(B1) 申请公布日期 2004.10.12
申请号 US20020117501 申请日期 2002.04.05
申请人 T-RAM, INC. 发明人 ELDRIDGE MATTHEW;IGEHY ROBERT HOMAN
分类号 G06F12/08;G11C7/10;G11C8/12;(IPC1-7):G11C8/00 主分类号 G06F12/08
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