| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for fabricating a CMOS image sensor capable of forming a mini-P well corresponding to high integration stably in a pixel region. SOLUTION: The process for fabricating a CMOS image sensor comprises a step for preparing a semiconductor substrate 10 where a peripheral region 100 and a pixel region 200 are defined, a step for forming a first photoresist pattern exposing only the normal P well forming region of the peripheral region 100, a step for forming a normal P well 14 by implanting first P type impurity ions in the normal P well forming region using stepwise ion implantation, a step for forming a second photoresist pattern exposing only the mini-P well forming region of the pixel region 200 after removing the first photoresist pattern, and a step for forming the mini-P well 14 by implanting second P type impurity ions in the mini-P well forming region. Thickness of the first photoresist pattern is set thicker than that of the second photoresist pattern. COPYRIGHT: (C)2005,JPO&NCIPI
|
