| 摘要 |
PROBLEM TO BE SOLVED: To mount a plurality of pieces of active elements having a high withstand voltage and a carrier travelling characteristic on a common substrate by using a compound semiconductor layer. SOLUTION: A SiC substrate 10 is provided with a first active area 12 comprising alternate lamination of a high concentration n-type doped layer 12a and an undoped layer 12b, and with a second active area 13 comprising alternate lamination of a high concentration p-type doped layer 13a and an undoped layer 13b in this order from below. A Schottky-diode 20 and a pMOSFET 30 are provided on the first active area 12, and an nMOSFET 40, a capacitor 50 and an inductor 60 are provided on the second active area 13. The Schottky-diode 20, the MOSFET 30, and the MOSFET 40 have a withstand voltage characteristic and a carrier travelling characteristic due to a lamination structure of aδdoped layer and the undoped layer, and are integrated on a common substrate. COPYRIGHT: (C)2005,JPO&NCIPI |
