| 摘要 |
PROBLEM TO BE SOLVED: To provide a MOS type color solid-state imaging device which is manufactured easily, and by which the area of the light-receiving section of the surface of a semiconductor substrate can be taken widely and the quality of the image is improved. SOLUTION: In the MOS type color solid-state imaging device, a complementary-color filter which is laminated on the upper sections of the whole or partial light-receiving sections in the plural and prevents the incident light of one color in three primary colors, and through which the incident light of residual two colors is transmitted; a first high-concentration impurity layer detecting the color signal of one color in the two colors transmitted through the filter in first, and second high-concentration impurity layers formed while being separated in the depthwise direction of the light-receiving sections, on which the filter is laminated, the second high-concentration impurity layer detecting the color signal of the residual one color in the two colors; and a signal wiring being connected to each high-concentration impurity layer by an ohmic contact and discriminating and reading each color signal; are mounted. COPYRIGHT: (C)2005,JPO&NCIPI
|
