| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which an element forming region can be decreased and parasitic capacitance can be reduced at the gate electrode part, and to provide its fabricating method. SOLUTION: The semiconductor device comprises a body 1C provided on a box 1B, a level difference part 6 for isolation provided in the body 1C, a gate oxide film 4 provided on the body 1C and being isolated from other elements by the level difference part 6, a gate electrode part 2 provided on the gate oxide film 4, a drain diffusion layer 3A provided on the body 1C in a region from one side of the gate electrode part 2 to the level difference part 6, a source diffusion layer 3B provided on the body 1C in a region from the other side of the gate electrode part 2 to the level difference part 6, and silicide 15 provided in a part from the source diffusion layer 3B to the underside of the body 1C on the other side of the gate electrode part 2. COPYRIGHT: (C)2005,JPO&NCIPI
|
