发明名称 |
METHOD AND APPARATUS FOR IN SITU DEPOSITING OF NEUTRAL CS UNDER ULTRA-HIGH VACUUM TO ANALYTICAL ENDS |
摘要 |
The present invention relates to a method for modifying the electronic properties of a surface to analytical ends, such as SIMS or electron spectroscopy, characterised in that it comprises in situ deposition of pure neutral cesium (Cs<0>), under ultra-high vacuum, said neutral cesium being enabled in the form of a collimated adjustable stream. The invention relates also to the special column designed for implementing the method and to the corresponding energy and/or mass analyser instrument. |
申请公布号 |
WO2004038395(A3) |
申请公布日期 |
2004.10.07 |
申请号 |
WO2003EP12074 |
申请日期 |
2003.10.24 |
申请人 |
CENTRE DE RECHERCHE PUBLIC - GABRIEL LIPPMANN;MIGEON, HENRI-NOEL;WIRTZ, TOM |
发明人 |
MIGEON, HENRI-NOEL;WIRTZ, TOM |
分类号 |
G01N23/225 |
主分类号 |
G01N23/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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