发明名称 MAGNETIC RECORDING ELEMENT FOR STORING DATA BY USING GIANT MAGNETORESISTIVE EFFECT OR TUNNELING MAGNETORESISTIVE EFFECT AND FABRICATING METHOD THEREOF
摘要 PURPOSE: A magnetic recording element and a fabricating method thereof are provided to prevent reduction of a size of a memory cell by reducing a margin for an error in alignment between a TMR element and a conductor connected to the TMR element. CONSTITUTION: The X-direction delimiting mask(S11) includes a straight edge. The X-direction delimiting mask is disposed such that the straight edge is parallel to the Y direction and crosses both the TMR element(1) and the strap(5) in plan view. Also, in use of the X-direction delimiting mask(S11), respective portions of the TMR element(1) and the strap(5) situated in the positive X side relative to the straight edge of the X-direction delimiting mask(S11) in plan view are covered with the X-direction delimiting mask(S11).
申请公布号 KR20040084817(A) 申请公布日期 2004.10.06
申请号 KR20040020292 申请日期 2004.03.25
申请人 RENESAS TECHNOLOGY CORP. 发明人 MAEJIMA SHINROKU;UENO SHUICHI;TAKENAGA TAKASHI;KUROIWA TAKEHARU
分类号 G11C11/15;G11B5/74;G11B5/84;G11C11/16;H01L21/8246;H01L27/10;H01L27/105;H01L43/08;(IPC1-7):G11C11/15 主分类号 G11C11/15
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