发明名称 CHARGE PUMP CIRCUIT PREVENTING A BODY EFFECT
摘要 PURPOSE: A charge pump circuit is provided to prevent a body effect and to generate a high voltage rapidly. CONSTITUTION: The first pumping unit(110) pumps charges according to the first and the second clock signal. A transfer unit(120) transfers the charges pumped by the first pumping unit. A voltage drop prevention unit(130) prevents voltage drop by being connected to the transfer unit. And the second pumping unit(140) is connected to the transfer unit, and reduces a pumping time by the second and the fourth clock signal. The transfer unit comprises a number of NMOS transistors connected between an input port and an output port serially.
申请公布号 KR20040084523(A) 申请公布日期 2004.10.06
申请号 KR20030019662 申请日期 2003.03.28
申请人 MAGNACHIP SEMICONDUCTOR, LTD. 发明人 CHO, JI HUN
分类号 G11C5/14;(IPC1-7):G11C5/14 主分类号 G11C5/14
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