发明名称 |
CHARGE PUMP CIRCUIT PREVENTING A BODY EFFECT |
摘要 |
PURPOSE: A charge pump circuit is provided to prevent a body effect and to generate a high voltage rapidly. CONSTITUTION: The first pumping unit(110) pumps charges according to the first and the second clock signal. A transfer unit(120) transfers the charges pumped by the first pumping unit. A voltage drop prevention unit(130) prevents voltage drop by being connected to the transfer unit. And the second pumping unit(140) is connected to the transfer unit, and reduces a pumping time by the second and the fourth clock signal. The transfer unit comprises a number of NMOS transistors connected between an input port and an output port serially.
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申请公布号 |
KR20040084523(A) |
申请公布日期 |
2004.10.06 |
申请号 |
KR20030019662 |
申请日期 |
2003.03.28 |
申请人 |
MAGNACHIP SEMICONDUCTOR, LTD. |
发明人 |
CHO, JI HUN |
分类号 |
G11C5/14;(IPC1-7):G11C5/14 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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