发明名称 |
COMPOSITION FOR FORMING POROUS FILM AND METHOD FOR PRODUCING THE COMPOSITION, METHOD FOR PRODUCING THE POROUS FILM, THE RESULTANT POROUS FILM, INTERLAMINAR FILM AND SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a composition usable for electronic materials or the like, as a composition reduced in metallic impurities and halogen impurities obtained by hydrolysis/condensation of alkoxysilane(s), and to obtain an electrical insulation film of low dielectric constant by coating and baking the composition. SOLUTION: A method for producing the composition is provided, comprising carrying out a hydrolysis/condensation reaction of one or more alkoxysilanes selected from the group consisting of those of formulas(1) to (4) or partial hydrolyzate(s) thereof in the presence of a catalyst consisting of a trialkylmethylammonium hydroxide of formula(5) in an organic solvent. The composition for forming films obtained by the above method is provided. The low-dielectric film reduced in metallic impurities and halogen impurities obtained by coating a substrate with the above composition followed by baking the composition is also provided. COPYRIGHT: (C)2004,JPO&NCIPI
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申请公布号 |
JP2004269693(A) |
申请公布日期 |
2004.09.30 |
申请号 |
JP20030062606 |
申请日期 |
2003.03.10 |
申请人 |
SHIN ETSU CHEM CO LTD;MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
HAMADA YOSHITAKA;YAGIHASHI FUJIO;NAKAGAWA HIDEO;SASAGO MASARU |
分类号 |
B05D7/24;C01B33/12;C08G77/08;C08G77/18;C09D183/00;H01L21/312;H01L21/316;H01L21/768;(IPC1-7):C09D183/00 |
主分类号 |
B05D7/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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