发明名称 COMPOSITION FOR FORMING POROUS FILM AND METHOD FOR PRODUCING THE COMPOSITION, METHOD FOR PRODUCING THE POROUS FILM, THE RESULTANT POROUS FILM, INTERLAMINAR FILM AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a composition usable for electronic materials or the like, as a composition reduced in metallic impurities and halogen impurities obtained by hydrolysis/condensation of alkoxysilane(s), and to obtain an electrical insulation film of low dielectric constant by coating and baking the composition. SOLUTION: A method for producing the composition is provided, comprising carrying out a hydrolysis/condensation reaction of one or more alkoxysilanes selected from the group consisting of those of formulas(1) to (4) or partial hydrolyzate(s) thereof in the presence of a catalyst consisting of a trialkylmethylammonium hydroxide of formula(5) in an organic solvent. The composition for forming films obtained by the above method is provided. The low-dielectric film reduced in metallic impurities and halogen impurities obtained by coating a substrate with the above composition followed by baking the composition is also provided. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004269693(A) 申请公布日期 2004.09.30
申请号 JP20030062606 申请日期 2003.03.10
申请人 SHIN ETSU CHEM CO LTD;MATSUSHITA ELECTRIC IND CO LTD 发明人 HAMADA YOSHITAKA;YAGIHASHI FUJIO;NAKAGAWA HIDEO;SASAGO MASARU
分类号 B05D7/24;C01B33/12;C08G77/08;C08G77/18;C09D183/00;H01L21/312;H01L21/316;H01L21/768;(IPC1-7):C09D183/00 主分类号 B05D7/24
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