| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a pattern inspection method capable of performing defect inspection simply, quickly and surely, even when performing the defect inspection of a pattern of a sample having a large region. <P>SOLUTION: In this pattern inspection method, sample images 40', 40" are formed based on charged particles generated from the sample by irradiating and simultaneously scanning the sample with an electron beam, and the pattern 40 of the sample is inspected based on the acquired sample images. In the method, a scanning region of the electron beam is set on the first region D1 including the sample images, and the electron beam is allowed to scan the sample to acquire the first sample image 40', and the scanning region of the electron beam is set on the second region D2 different from the first region D1 and including the sample images, and the electron beam is allowed to scan the sample to acquire the second sample image 40", and the first sample image 40' and the second sample image 40" are overlapped together to acquire a synthetic sample image, and the defect inspection is performed by comparing a reference image 42 of the sample stored beforehand with the synthetic sample image. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
