| 摘要 |
<p>A semiconductor memory arranged such that a bit line connected with a memory cell having a ferroelectric capacitor is connected with a guarantee cell having a ferroelectric capacitor, data is read out from the memory cell by read operation of data from the memory cell, and data read out from the memory cell by destructive reading is written automatically in the guarantee cell so that the data is held surely as nonvolatile binary data regardless of the operating condition and missing of data can be suppressed.</p> |
