| 摘要 |
In one embodiment, a gate of a transistor is formed by performing a first thermal treatment on a silicon layer, forming a metal stack over the silicon layer, and performing a second thermal treatment on the metal stack. The first thermal treatment may be a rapid thermal annealing step, while the second thermal treatment may be a rapid thermal nitridation step. The resulting gate exhibits relatively low interface contact resistance between the silicon layer and the metal stack, and may thus be advantageously employed in high-speed devices.
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