Selectively deposited PGO thin film method for forming same

摘要

A memory device formed from selectively deposited PGO and a method for selectively forming a Pb5Ge3O11 (PGO) thin film memory device are provided. The method comprises: forming a silicon (Si) substrate; forming a silicon oxide film overlying the substrate; forming a patterned bottom electrode overlying the silicon oxide film; selectively depositing a PGO film overlying the bottom electrode; annealing; and, forming a top electrode overlying the PGO film. Selectively depositing a PGO film overlying the bottom electrode includes: depositing a seed layer of PGO; and, forming a c-axis oriented PGO layer overlying the seed layer.