| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device having satisfactory noise and read characteristics by improving the noise and read characteristics with enhanced balance. SOLUTION: In the solid-state imaging device, an electrode 8 for reading signal charges is provided at one side of a light reception sensor 11 for composing pixels, a specific voltage signal V is applied to a shielding film 9 that is formed while covering portions other than the light reception sensor section 11 in an imaging region, a second-conductivity-type semiconductor region 6 is formed at the center on the surface of a first-conductivity-type semiconductor region 2 for composing the photoelectric conversion region of the light reception sensor 11, and regions 10 (10A, 10B) whose impurity concentration is lower than the second-conductivity-type semiconductor region 6 are formed at the end of the side of the electrode 8 on the surface of the first-conductivity-type semiconductor region 2 and the end of the side of a pixel separation region 3 at the opposite side. COPYRIGHT: (C)2004,JPO&NCIPI
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