发明名称 |
Integrated memory with a configuration of non-volatile memory cells and method for fabricating and for operating the integrated memory |
摘要 |
An integrated memory with a configuration of non-volatile memory cells based on ferromagnetic storage contains both powerful memory cells with a magnetoresistive effect with a transistor control and cost-effective memory cells with a magnetoresistive effect with memory elements connected between the word lines and bit lines. The memory elements connected directly between the bit line and the word line are preferably inserted in memory cell arrays that can be stacked one above the other above the memory cells with the transistor, and thereby achieve a high integration density. The fact that the memory, which contains both types and thereby satisfies all the system requirements, is fabricated in one module and in one process sequence considerably lowers the fabrication costs.
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申请公布号 |
US6798689(B2) |
申请公布日期 |
2004.09.28 |
申请号 |
US20030444546 |
申请日期 |
2003.05.23 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
MUELLER GERHARD;SCHLOESSER TILL |
分类号 |
H01L27/105;G11C11/15;H01L21/8246;H01L27/112;(IPC1-7):G11C11/00;G11C11/14 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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