| 摘要 |
A means for measuring the temperature in the surroundings of a semiconductor laser is provided and, if the temperature is not above a certain level, power correction is performed at high speed by linearly approximating the I-H characteristic according to one item out of reproduction power and multi-pulse recording power, or if the temperature is higher, accurate power correction of the semiconductor laser is accomplished by detecting a plurality of items out of reproduction power and multi-pulse recording power.
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