发明名称 |
Semiconductor laser device and method of manufacturing same |
摘要 |
In a semiconductor laser device having a quantum well active layer, an undoped thin spacer layer is formed between an undoped optical guide layer and a p-type cladding layer. The thickness of the spacer layer is preferably 5 nm or more but less than 10 nm. The spacer layer absorbs impurities diffusing thereinto from the p-type cladding layer. Thus, the dopant is prevented from being diffused into the undoped optical guide layer.
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申请公布号 |
US6798808(B1) |
申请公布日期 |
2004.09.28 |
申请号 |
US20000492803 |
申请日期 |
2000.01.28 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
KONUSHI FUMIHIRO;OHKUBO NOBUHIRO;KAWATO SHINICHI |
分类号 |
H01S5/343;H01S5/323;(IPC1-7):H01S5/00 |
主分类号 |
H01S5/343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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