| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a chemical compound semiconductor having proper crystallinity and low resistivity, not obtained before in a GaN compound semiconductor, and its manufacturing method, and to provide a semiconductor light-emitting element, which is excellent in an electric property and an optical property, employing this compound semiconductor. <P>SOLUTION: The manufacturing method is to supply either material of P, As, or Sb to In<SB>x</SB>Ga<SB>y</SB>Al<SB>1-x-y</SB>N layer(0≤x, y≤1) simultaneously and to supply a dopant. In the compound semiconductor manufactured like this, a compressive strain is imposed on a crystal and an expansive strain, in the crystal, caused from a void of nitrogen can be relaxed, therefore, the manufactured compound semiconductor is a proper compound semiconductor superior in a crystallinity of less lattice defect. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
