发明名称 Method and apparatus for monitoring plasma conditions using a monitoring ring
摘要 A plasma processing system is provided that allows for monitoring a plasma processing system during plasma processing. The plasma processing system includes a processing chamber and a monitoring system for monitoring conditions of the processing chamber. By providing tools within a tool housing that is protected from the plasma environment but still in very close proximity thereto, better process monitoring can be achieved.
申请公布号 US2004177922(A1) 申请公布日期 2004.09.16
申请号 US20040788328 申请日期 2004.03.01
申请人 TOKYO ELECTRON LIMITED 发明人 FINK STEVEN T.
分类号 H01J37/32;(IPC1-7):C23F1/00;H01L21/306;F26B5/04 主分类号 H01J37/32
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