MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device whereby uniformly coated P-OCD suppressing variations in impurity diffusion in emitter region formation can form a stable emitter region and a POCl3deposited on a rear side of a substrate can diffuse phosphorus onto the rear side, so as to enhance the ohmic performance with electrodes on the rear side and getter heavy metal impurities, and upper part on the emitter region is protected with an OCD glass layer in this case to thereby diffuse the phosphorous onto the rear side of the substrate without changing the emitter characteristics. SOLUTION: The manufacturing method includes the steps of forming a base region of an opposite conductivity on a semiconductor substrate of one conductivity acting like a collector region, exposing an emitter region going to be formed on the surface of the base region, forming an emitter region by diffusing a one-conductivity impurity by a liquid dopant source, and diffusing the one-conductivity impurity onto the rear side of the substrate by a gas source at the same time. COPYRIGHT: (C)2004,JPO&NCIPI