发明名称 |
Trench power MOSFET with planarized gate bus |
摘要 |
Power MOSFETs and fabrication processes for power MOSFETs use a continuous conductive gate structure within trenches to avoid problems arising from device topology caused when a gate bus extends above a substrate surface. The conductive gate structure forms gates in device trenches in an active device region and forms a gate bus in a gate bus trench. The gate bus trench that connects to the device trenches can be wide to facilitate forming a gate contact to the gate bus, while the device trenches can be narrow to maximize device density. CMP process can be used to planarize the conductive gate structure and/or overlying insulating layers. The processes are compatible with processes forming self-aligned or conventional contacts in the active device region.
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申请公布号 |
US2004173844(A1) |
申请公布日期 |
2004.09.09 |
申请号 |
US20030383231 |
申请日期 |
2003.03.05 |
申请人 |
ADVANCED ANALOGIC TECHNOLOGIES, INC. ADVANCED ANALOGIC TECHNOLOGIES (HONGKONG) LIMITED |
发明人 |
WILLIAMS RICHARD K.;CORNELL MICHAEL E.;CHAN WAI TIEN |
分类号 |
H01L21/336;H01L29/423;H01L29/45;H01L29/49;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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