发明名称 |
WORKING METHOD FOR METAL MATERIAL AND SEMICONDUCTOR APPARATUS FABRICATED BY USING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a diode base by which the diode base is highly accurately manufactured with excellent productivity. SOLUTION: This manufacturing method for the diode base comprises constraining a circumference of a blank made of Cu-Mo composite material and one of surfaces to be worked with the use of a die, and using a working punch or a counter punch to apply working pressure to either of the surface to be worked, thereby affording a cup-shaped body. The press working of the blank is performed by setting the worked surface to≤5% of the whole surface area of the blank. COPYRIGHT: (C)2004,JPO&NCIPI
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申请公布号 |
JP2004249366(A) |
申请公布日期 |
2004.09.09 |
申请号 |
JP20030409735 |
申请日期 |
2003.12.09 |
申请人 |
HITACHI LTD |
发明人 |
KOBAYASHI MASAYUKI;HARADA KOJI;TOKUDA HIROATSU;KOJIMA KAZUO |
分类号 |
B21J5/00;B21J5/06;B21J13/02;B21K21/00;H01L23/48;(IPC1-7):B21J5/00 |
主分类号 |
B21J5/00 |
代理机构 |
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主权项 |
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