| 摘要 |
PROBLEM TO BE SOLVED: To provide an insulating film which can be used as a hard mask, an etching stopper, a CMP stopper, a metal diffusion stopper, etc. in the manufacturing of a semiconductor device or the like. SOLUTION: In a porous insulating film having fine voids over the whole film thickness, the voids of the insulating film are derived from fine particles of a 1st low dielectric constant film forming component, and the insulating film is provided with at least one barrier layer formed by the 1st film forming component and a 2nd film forming component having a substance different from the 1st film forming component. COPYRIGHT: (C)2004,JPO&NCIPI
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