| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where the number of wiring layers when wiring different in thickness is installed is reduced and a process is simplified, and to provide a manufacturing method of the device. SOLUTION: In a channel wiring part 354, wiring 339A, etc. whose film thickness is larger than wiring 333, etc. of a general circuit 350 are disposed in a common wiring layer. In a pad 357, wiring 339C whose film thickness is larger than wiring 333 of the general circuit 350 is installed in the common wiring layer. In a sealing part 356, a seal ring 339D, etc. whose film thickness is larger than wiring 333, etc. of the general circuit 350 are arranged in the common wiring layer. In memories 351 to 353, wiring 334, etc. whose film thickness is smaller than wiring 333, etc. of the general circuit 350 are arranged in the common wiring layer. In fuse circuits 351a and 352a of a memory, fuses 360 whose film thickness is smaller than wiring 333 of the general circuit 350 are installed in the common wiring layer. COPYRIGHT: (C)2004,JPO&NCIPI
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