发明名称 CLEANING LIQUID AND CLEANING METHOD USING SAME
摘要 PROBLEM TO BE SOLVED: To provide a cleaning liquid which can perfectly eliminate, within a short period of time, the etching residues remaining after the dry etching in the wiring process of semiconductor devices or display devices to which a metal wiring is performed for use into a semiconductor integrated circuit and does not oxidate or corrode a copper wiring material and insulation film material or the like. SOLUTION: The cleaning liquid contains nitric acid, sulfuric acid, and fluorine compound. Moreover, concentration of water in which pH value has been adjusted to 3 to 7 through addition of a basic compound is set to 80 wt%. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004253524(A) 申请公布日期 2004.09.09
申请号 JP20030040930 申请日期 2003.02.19
申请人 MITSUBISHI GAS CHEM CO INC;RENESAS TECHNOLOGY CORP;HITACHI ULSI SYSTEMS CO LTD 发明人 TSUGANE MASARU;KOKUNI MASAKI;MATSUNAGA HIROTSUGU;KIMURA YOSHIYA
分类号 C11D1/34;C11D3/04;C11D3/26;C11D7/08;C11D7/10;C11D7/32;C11D17/08;H01L21/304;(IPC1-7):H01L21/304 主分类号 C11D1/34
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