发明名称 |
Semiconductor device and method for manufacturing same |
摘要 |
The present invention reduces the effective dielectric constant of the interlayer insulating film while inhibiting the decrease of the reliability of the semiconductor device, which otherwise is caused by a moisture absorption. A copper interconnect comprising a Cu film 209 is formed in multilayer films comprising a L-Ox(TM) film 203 and a SiO2 film 204. Since the L-Ox(TM) film 203 comprises ladder-shaped siloxane hydride structure, the film thickness and the film characteristics are stable, and thus changes in the film quality is scarcely occurred during the manufacturing process.
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申请公布号 |
US2004173910(A1) |
申请公布日期 |
2004.09.09 |
申请号 |
US20040760554 |
申请日期 |
2004.01.21 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
USAMI TATSUYA;ISHIGAMI TAKASHI;KUROKAWA TETSUYA;ODA NORIAKI |
分类号 |
C23C16/42;H01L21/316;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/44;H01L23/48 |
主分类号 |
C23C16/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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