| 发明名称 |
Method and system for erasing a nitride memory device |
| 摘要 |
The present invention is a method and system for erasing a nitride memory device. In one embodiment of the present invention, an isolated P-well is formed in a semiconductor substrate. A plurality of N-type impurity concentrations are formed in the isolated P-well and a nitride memory cell is fabricated between two of the N-type impurity concentrations. Finally, an electrical contact is coupled to the isolated P-well.
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| 申请公布号 |
US2004169218(A1) |
申请公布日期 |
2004.09.02 |
| 申请号 |
US20020306252 |
申请日期 |
2002.11.27 |
| 申请人 |
RANDOLPH MARK W.;CHANG CHI;HE YI;ZHENG WEI;RUNNION EDWARD F.;LIU ZHIZHENG |
发明人 |
RANDOLPH MARK W.;CHANG CHI;HE YI;ZHENG WEI;RUNNION EDWARD F.;LIU ZHIZHENG |
| 分类号 |
G11C16/04;G11C16/14;H01L21/336;H01L29/792;(IPC1-7):H01L29/788 |
主分类号 |
G11C16/04 |
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