发明名称 |
METHOD FOR FORMING PATTERN |
摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a proper sectional shape of a resist pattern, although the resist pattern is formed using exposure light having a light component entering a resist film at the Brewster angle. <P>SOLUTION: The resist film 11 consisting of a chemical amplification type resist material is formed, in which the proportion of the polymer that is protected by a protecting group to the alkali-soluble polymer is 50% or more. After the pattern exposure is performed by irradiating the resist film 11 with KrF excimer laser light 12 (the exposure light having the light component entering the resist film 11 at the Brewster angle) having the NA (numeric aperture) of 0.92, the resist pattern 14 is formed by the development with an alkaline developing solution. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
申请公布号 |
JP2004246236(A) |
申请公布日期 |
2004.09.02 |
申请号 |
JP20030037917 |
申请日期 |
2003.02.17 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
ENDO MASATAKA;SASAKO MASARU |
分类号 |
G03F7/038;G03F7/039;G03F7/20;G03F7/207;G03F7/38;H01L21/027 |
主分类号 |
G03F7/038 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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